Stacked body including graphene film and electronic device including graphene film

ABSTRACT

A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G′ of 40 cm −1  or less under Raman spectroscopy analysis is 50% or more. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to a stacked body and an electronicdevice. The present application claims priority to Japanese PatentApplication No. 2016-083868 filed on Apr. 19, 2016, Japanese PatentApplication No. 2016-234207 filed on Dec. 1, 2016, and Japanese PatentApplication No. 2016-234444 filed on Dec. 1, 2016, and the entirecontents of which are hereby incorporated by reference.

Description of the Background Art

Graphene is a material in which carbon atoms form an sp² hybrid orbitaland the carbon atoms are bonded two-dimensionally. Graphene in whichcarbon atoms are bonded in such a condition has a feature that thecarrier mobility is remarkably high. Therefore, by use of a graphenefilm as a channel of an electronic device such as transistor, forexample, the electronic device is expected to be increased in switchingspeed.

An electronic device in which a graphene film is used as an electricallyconductive portion (channel for example) can be manufactured by forminga stacked body including the graphene film and forming electrodes or thelike on the stacked body. The stacked body including the graphene filmcan be formed for example by bonding to a support substrate a graphenethin film exfoliated from graphite, or bonding to a support substrate agraphene thin film grown by CVD (Chemical Vapor Deposition).

In order to ensure an acceptable production efficiency in massproduction of electronic devices, it is preferable to use a supportsubstrate having a large diameter (having a diameter of two inches ormore, for example) in the stacked body. In the stacked body formedthrough a procedure including bonding of a graphene film as describedabove, a large region without the graphene film is included in thesurface of the support substrate. In such a case, a process formanufacturing an electronic device, such as positional alignment forforming electrodes, is difficult to automate. A resultant problem isthat mass production of electronic devices in which the aforementionedstacked body is used is difficult to automate.

In contrast, a method has been proposed according to which a substratemade of SiC (silicon carbide) is heated to desorb Si atoms and therebytransform a surface layer of the substrate into graphene, andaccordingly a stacked body in which the graphene film is formed on thesubstrate is produced (see Japanese Patent Laying-Open No. 2015-48258for example). Thus, in the main surface of the substrate, the regionwithout the graphene film is reduced. As a result of this, massproduction of electronic devices in which the stacked body is used isfacilitated.

SUMMARY OF THE INVENTION

A stacked body of the present disclosure includes: a substrate made ofsilicon carbide and having a first main surface forming an angle of 20°or less with a silicon plane; and a graphene film disposed on the firstmain surface and having an atomic arrangement oriented in relation to anatomic arrangement of silicon carbide forming the substrate. In anexposed surface of the graphene film which is a main surface opposite tothe substrate, an area ratio of a region having a full width at halfmaximum of G′ of 40 cm⁻¹ or less under Raman spectroscopy analysis is50% or more.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view showing a structure of astacked body including a graphene film.

FIG. 2 is a schematic diagram for illustrating a method for evaluating agraphene film.

FIG. 3 is a flowchart generally showing a method for manufacturing astacked body including a graphene film.

FIG. 4 is a schematic cross-sectional view for illustrating a method formanufacturing a stacked body.

FIG. 5 is a schematic cross-sectional view showing a structure of aheating apparatus.

FIG. 6 is a schematic cross-sectional view showing a structure of afield effect transistor (FET) including a graphene film.

FIG. 7 is a flowchart generally showing a method for manufacturing afield effect transistor including a graphene film.

FIG. 8 is a schematic cross-sectional view for illustrating the methodfor manufacturing a field effect transistor including a graphene film.

FIG. 9 is a schematic cross-sectional view for illustrating the methodfor manufacturing a field effect transistor including a graphene film.

FIG. 10 is a schematic cross-sectional view for illustrating the methodfor manufacturing a field effect transistor including a graphene film.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[Problems to be Solved by the Disclosure]

In the case where a stacked body in which a graphene film is formed on asubstrate made of SiC is used to manufacture an electronic device inwhich the graphene film forms an electrically conductive portion, themobility in the electrically conductive portion may be lower than anexpected value of the mobility.

In view of the above, one object is to provide a stacked body and anelectronic device including the stacked body that enable a high mobilityto be stably ensured in an electronic device manufactured to include thegraphene film forming an electrically conductive portion.

[Effects of the Disclosure]

With the stacked body of the present disclosure, a high mobility canstably be ensured in an electronic device manufactured to include thegraphene film forming an electrically conductive portion.

[Description of Embodiments of the Invention]

Initially, aspects of the present invention will be described one byone. A stacked body of the present application includes: a substratemade of silicon carbide and having a first main surface forming an angleof 20° or less with a silicon plane; and a graphene film disposed on thefirst main surface and having an atomic arrangement oriented in relationto an atomic arrangement of silicon carbide forming the substrate. In anexposed surface of the graphene film which is a main surface opposite tothe substrate, an area ratio of a region having a full width at halfmaximum of G′ of 40 cm⁻¹ or less under Raman spectroscopy analysis is50% or more.

As to the case where a stacked body in which a graphene film is formedon a substrate made of SiC is used to manufacture an electronic devicein which the graphene film forms an electrically conductive portion, theinventors of the present invention studied the reasons why the mobilityin the electrically conductive portion is lower than an expected valueof the mobility. As a result, the inventors have found that the graphenefilm having an atomic arrangement oriented in relation to an atomicarrangement of SiC forming the substrate includes regions in which thegraphene film thickness is partially larger, and the presence of theseregions significantly influences the mobility. For the graphene film onthe main surface of the silicon carbide substrate close to a siliconplane ((0001) plane), the full width at half maximum of G′ under Ramanspectroscopy analysis is used as an indicator of the film thickness.Then, in the exposed surface, under the condition that an area ratio ofa region having a full width at half maximum of G′ of 40 cm⁻¹ or lessunder Raman spectroscopy analysis is 50% or more, a high mobility can bestably ensured.

Regarding the stacked body of the present application, in an exposedsurface of the graphene film, an area ratio of a region having a fullwidth at half maximum of G′ of 40 cm⁻¹ or less under Raman spectroscopyanalysis is 50% or more. Therefore, an electrode can be formed on theexposed surface to manufacture the electronic device in which a highmobility is stably ensured. Thus, in the case where the stacked body ofthe present application is used to manufacture an electronic device inwhich the graphene film forms an electrically conductive portion, thestacked body enables a high mobility to be stably ensured. Preferably,in the exposed surface of the graphene film, an area ratio of a regionhaving a full width at half maximum of G′ of 40 cm⁻¹ or less under Ramanspectroscopy analysis is 70% or more.

In the stacked body, the graphene film may cover 80% or more of thefirst main surface. Accordingly, the region where the graphene film isabsent in the first main surface of the substrate is reduced. As aresult, mass production of electronic devices in which the stacked bodyis used is facilitated.

In the stacked body, the carrier mobility in the graphene film ispreferably 1000 cm²/Vs or more, and more preferably 2500 cm²/Vs or more.Accordingly, the switching speed of an electronic device manufacturedwith the stacked body can be increased.

In the stacked body, the substrate may have a disk shape. The substratemay have a diameter of 50 mm or more. Accordingly, the efficiency ofmanufacture of an electronic device in which the stacked body is usedcan be increased.

An electronic device of the present application includes the stackedbody, a first electrode disposed on the exposed surface, and a secondelectrode disposed on the exposed surface and spaced from the firstelectrode.

In the electronic device of the present application, the first electrodeand the second electrode are formed on the exposed surface of thestacked body of the present application. Therefore, in the electronicdevice of the present application, a high mobility in the electricallyconductive portion can be stably ensured.

[Details Of Embodiments of the Invention]

Next, an embodiment of the stacked body in accordance with the presentinvention will be described below with reference to the drawings. In thefollowing drawings, the same or corresponding parts are denoted by thesame reference numerals, and a description thereof will not be repeated.

First Embodiment

Referring to FIG. 1, a stacked body 1 of the present embodiment includesa substrate 2 and a graphene film 3. Substrate 2 is made of siliconcarbide (SiC). The SiC forming substrate 2 is hexagonal SiC having a 6Hstructure, for example. Substrate 2 has a disk shape. Substrate 2 has adiameter of two inches or more (50 mm or more). Substrate 2 has a firstmain surface 2A. First main surface 2A is a silicon-plane-side mainsurface forming an angle of 20° or less with a silicon plane, namely(0001) plane of SiC forming substrate 2. More specifically, in thepresent embodiment, first main surface 2A is a silicon-plane-side mainsurface forming an angle of 1° or less with a silicon plane of SiCforming substrate 2. Namely, first main surface 2A is substantially thesilicon plane.

Graphene film 3 is disposed on first main surface 2A of substrate 2.Graphene film 3 is formed of graphene having an atomic arrangementoriented in relation to an atomic arrangement of SiC forming substrate2. The condition in which an atomic arrangement of graphene forminggraphene film 3 is oriented in relation to an atomic arrangement of SiCforming substrate 2 means that the atomic arrangement of graphene has acertain relation with the atomic arrangement of SiC forming substrate 2.Whether or not the atomic arrangement of graphene is oriented inrelation to the atomic arrangement of SiC can be confirmed for exampleby the LEED (Low Energy Electron Diffraction) method. In an exposedsurface 3A of graphene film 3, which is a main surface opposite to thesubstrate 2 side, an area ratio of a region having a full width at halfmaximum of G′ of 40 cm⁻¹ or less under Raman spectroscopy analysis is50% or more.

Regarding stacked body 1 of the present embodiment, in exposed surface3A of graphene film 3, an area ratio of a region having a full width athalf maximum of G′ of 40 cm⁻¹ or less under Raman spectroscopy analysisis 50% or more. Accordingly, an electrode can be formed on exposedsurface 3A to manufacture an electronic device in which a high mobilityis stably ensured. Thus, stacked body 1 of the present embodimentenables a high mobility to be stably ensured in an electronic devicemanufactured to include graphene film 3 forming an electricallyconductive portion.

G′ is a peak appearing near 2700 cm⁻¹ (Raman shift) under Ramanspectroscopy analysis. The full width at half maximum of G′ under Ramanspectroscopy analysis can be confirmed for example by definingmeasurement regions as described below. FIG. 2 is a diagram showingmeasurement regions in the main surface of the exposed surface 3A sideof stacked body 1. For the sake of evaluating the whole of graphene film3, nine measurement regions 19 as shown in FIG. 2 may be defined.Specifically, measurement regions 19 each in the shape of a squarehaving a side of 50 μm for example are defined at nine locations. In themain surface of the exposed surface 3A side of stacked body 1 in acircular shape, measurement regions 19 are defined at regular intervalson two straight lines intersecting each other at the center of the mainsurface. One measurement region 19 is defined so that the intersectionof its diagonal lines is located at the center of the main surface. Withrespect to this measurement region 19, the remaining eight measurementregions 19 are defined.

In each measurement region 19, measurement can be conducted by scanningthe inside of measurement region 19 with a step distance of 1 μm, forexample. Namely, in each measurement region 19, measurements can betaken at 500 points. Stacked body 1 in which graphene film 3 having anatomic arrangement oriented in relation to an atomic arrangement of SiCforming substrate 2 is formed on substrate 2 of SiC has high durabilityagainst laser, and the laser intensity on a sample can be set to severalmW to several tens of mW. Therefore, spectrum data per point can beacquired in a short time, and measurements of the 500 points can betaken within an acceptable time. The ratio of points where the fullwidth at half maximum of G′ is 40 cm⁻¹ or less, relative to the peakscorresponding to the measured G′ at the 500 points, can be defined asthe area ratio of the region having a full width at half maximum of G′of 40 cm⁻¹ or less.

As a Raman spectroscopy analyzer, LAbRAM HR-800 manufactured by HORIBAJobin Yvon for example can be used. For the analysis, the laserwavelength can be 532 nm, the laser intensity on a sample can be 10 mW,the grating can be 300 gr/mm, the integration time can be 0.5 seconds,the number of integrations can be 2, and the objective lens of 100× canbe used.

Graphene film 3 covers preferably 80% or more by area of first mainsurface 2A of substrate 2, and more preferably 95% or more by areathereof. Accordingly, the region where graphene film 3 is absent infirst main surface 2A of substrate 2 is reduced. As a result, massproduction of electronic devices in which stacked body 1 is used isfacilitated.

The carrier mobility in graphene film 3 is preferably 1000 cm²/Vs ormore, and more preferably 2500 cm²/Vs or more. Accordingly, theswitching speed of an electronic device manufactured with stacked body 1can be increased.

Referring next to FIGS. 3 to 5, a method for manufacturing stacked body1 of the present embodiment will generally be described.

Referring to FIG. 3, in the method for manufacturing stacked body 1 ofthe present embodiment, initially a substrate preparing step isperformed as a step (S10). Referring to FIG. 4, in this step (S10), asubstrate 11 made of 6H-SiC and having a diameter of two inches (50.8mm) for example is prepared. More specifically, an ingot made of SiC issliced to obtain substrate 11 made of SiC. The surface of substrate 11is polished and thereafter subjected to a process such as washing. Inthis way, substrate 11 having its main surface with ensured flatness andcleanliness is obtained. Substrate 11 has a first main surface 11A.First main surface 11A is the silicon-plane-side main surface forming anangle of 1° or less with a silicon plane of SiC forming substrate 11,namely with (0001) plane. In other words, first main surface 11A issubstantially a silicon plane.

Next, a silicon carbide film forming step is performed as a step (S20).Referring to FIG. 4, in this step (S20), an SiC film 12 made of siliconcarbide is formed on first main surface 11A of substrate 11.Specifically, on first main surface 11A of substrate 11, SiC film 12 isformed by sputtering, for example. SiC film 12 is made of amorphous orpolycrystalline SiC, for example. The thickness of SiC film 12 may forexample be 0.5 nm or more and 5 nm or less. The step (S20) is thusperformed to obtain a material stacked body 10 including substrate 11and SiC film 12 formed on first main surface 11A of substrate 11.

Next, a transforming-into-graphene step is performed as a step (S30).This step (S30) can be performed with a heating apparatus shown in FIG.5, for example. Referring to FIG. 5, heating apparatus 90 includes amain body 91, a susceptor 92, a cover member 93, a gas inlet tube 95,and a gas outlet tube 96.

Main body 91 includes a side wall 91B having a hollow cylindrical shape,a bottom wall 91A closing a first end of side wall 91B, and a top wall91C closing a second end of side wall 91B. On bottom wall 91A withinmain body 91, susceptor 92 is disposed. Susceptor 92 has a substrateholding surface 92A for holding material stacked body 10.

In main body 91, cover member 93 is disposed to cover susceptor 92.Cover member 93 has a hollow cylindrical shape having a pair of ends,with one end closed and the other end opened, for example. Cover member93 is disposed so that the other end of cover member 93 is in contactwith bottom wall 91A. Susceptor 92 and material stacked body 10 onsusceptor 92 are surrounded by cover member 93 and bottom wall 91A ofmain body 91. In a closed space 93C which is a space surrounded by covermember 93 and bottom wall 91A of main body 91, susceptor 92 and materialstacked body 10 on susceptor 92 are disposed. An inner wall surface 93Aof cover member 93 faces a main surface 12A of SiC film 12 in materialstacked body 10, namely the main surface opposite to substrate 11 (seeFIG. 4).

Gas inlet tube 95 and gas outlet tube 96 are connected to top wall 91Cof main body 91. Gas inlet tube 95 and gas outlet tube 96 each have oneend connecting to a through hole formed in top wall 91C. The other endof gas inlet tube 95 is connected to a gas retainer retaining an inertgas (not shown). In the present embodiment, argon is retained in the gasretainer. The other end of gas outlet tube 96 is connected to an exhaustdevice such as pump (not shown).

The step (S30) can be carried out using heating apparatus 90 in thefollowing way. Initially, on a substrate holding surface 92A ofsusceptor 92, material stacked body 10 prepared in the step (S20) isdisposed. Then, cover member 93 is disposed on bottom wall 91A so as tocover susceptor 92 and material stacked body 10. Accordingly, susceptor92 as well as material stacked body 10 on susceptor 92 are surrounded bycover member 93 and bottom wall 91A of main body 91.

Next, a valve (not shown) disposed in gas inlet tube 95 is closed whilea valve disposed in gas outlet tube 96 is opened. Then, the exhaustdevice connected to gas outlet tube 96 is operated to cause gas in mainbody 91 to be discharged from gas outlet tube 96 along arrow B.Accordingly, the inside of main body 91 is decompressed. While susceptor92 and material stacked body 10 are surrounded by cover member 93 andbottom wall 91A of main body 91, cover member 93 is not joined to bottomwall 91A. Therefore, as the inside of main body 91 is furtherdecompressed, the pressure difference between the inside and the outsideof closed space 93C causes the internal gas to be discharged from aslight gap between cover member 93 and bottom wall 91A. As a result, theinside of closed space 93C is also decompressed.

Next, the operation of the exhaust device is stopped and the valvedisposed in gas inlet tube 95 is opened. Accordingly, argon retained inthe gas retainer is introduced into main body 91 through gas inlet tube95 (arrow A). As the pressure in main body 91 increases, the pressuredifference between the inside and the outside of closed space 93C causesargon to enter the closed space through a slight gap between covermember 93 and bottom wall 91A. In this way, the gas in main body 91 isreplaced with argon. As the pressure of argon in main body 91 increasesto the normal pressure (atmospheric pressure), extra argon is dischargedfrom gas outlet tube 96. The pressure in main body 91 is thus kept atthe normal pressure. Namely, in main body 91, an argon atmosphere at thenormal pressure is maintained.

Next, material stacked body 10 is heated. Main body 91 for example isheated to thereby cause material stacked body 10 to be heated. Main body91 may be heated by induction heating, for example. Material stackedbody 10 is heated in normal-pressure argon to a temperature of 1300° C.or more and 1800° C. or less, for example. Accordingly, with referenceto FIG. 4, Si atoms are desorbed from SiC forming SiC film 12, and asurface layer of SiC film 12, which is a region opposite to substrate 11and including main surface 12A, is transformed into graphene. Meanwhile,the substrate 11 side main surface 12B of SiC film 12 is in contact withsubstrate 11. Therefore, this heating causes an atomic arrangement inthe region including main surface 12B to be oriented in relation to theatomic arrangement of SiC forming substrate 11. As a result, the atomicarrangement of graphene generated through transformation of SiC film 12is oriented in relation to the atomic arrangement of SiC formingsubstrate 11. Referring to FIG. 1, in this way, stacked body 1 isobtained that includes substrate 2 made of SiC, and graphene film 3disposed on first main surface 2A of substrate 2 and having an atomicarrangement oriented in relation to the atomic arrangement of SiCforming substrate 2.

Through this procedure, stacked body 1 of the present embodiment iscompleted. As described above, cover member 93 is used in the presentembodiment. Therefore, Si atoms desorbed from SiC film 12 remain inclosed space 93C. Consequently, due to desorbing of Si from SiC film 12,the Si vapor pressure in closed space 93C increases. Thus, rapidtransformation of SiC into graphene is suppressed. In this way, the rateat which SiC is transformed into graphene is lowered to thereby formgraphene film 3 formed of one atomic layer or a small number of atomiclayers (close to one atomic layer).

A region having a large graphene film thickness which affects reductionof the mobility is formed in a region having any surface defect ofsubstrate 11 or damage generated during production of the substrate. Incontrast, in the present embodiment, it is not the surface layer ofprepared substrate 11 but SiC film 12 formed on substrate 11 that istransformed into graphene. Therefore, even in the case where any defector damage is present in the surface layer of substrate 11, the regionhaving a large graphene film thickness due to this can be prevented frombeing formed. Accordingly, it is possible to form graphene film 3 havingexposed surface 3A in which an area ratio of a region having a fullwidth at half maximum of G′ of 40 cm⁻¹ or less under Raman spectroscopyanalysis is 50% or more. As a result, stacked body 1 in which a highmobility can stably be ensured can be obtained.

Second Embodiment

Next, a description will be given of an FET (Field Effect Transistor)which is an example of the electronic device produced with stacked body1 of the first embodiment. Referring to FIG. 6, an FET 9 of the presentembodiment is produced with stacked body 1 of the first embodiment, andincludes stacked body 1 including substrate 2 and graphene film 3 whichare stacked like the first embodiment. FET 9 further includes a sourceelectrode 4 as a first electrode, a drain electrode 5 as a secondelectrode, a gate electrode 7 as a third electrode, and a gateinsulating film 6.

Source electrode 4 is formed in contact with exposed surface 3A. Sourceelectrode 4 is formed of a conductor which can make ohmic contact withgraphene film 3, such as Ni (nickel)/Au (gold), for example. Drainelectrode 5 is formed in contact with exposed surface 3A. Drainelectrode 5 is formed to be spaced from source electrode 4. Drainelectrode 5 is formed of a conductor which can make ohmic contact withgraphene film 3, such as Ni/Au, for example.

Gate insulating film 6 is formed to cover exposed surface 3A of graphenefilm 3 located between source electrode 4 and drain electrode 5. Gateinsulating film 6 not only covers exposed surface 3A located betweensource electrode 4 and drain electrode 5 but also extends to regionswhich partially cover the upper surface (the main surface opposite tothe surface contacting graphene film 3) of source electrode 4 and drainelectrode 5. Gate insulating film 6 is formed of an insulator such assilicon nitride (SiN) or aluminum oxide (Al₂O₃), for example.

Gate electrode 7 is disposed to contact the upper surface of gateinsulating film 6. Gate electrode 7 is disposed in a regioncorresponding to exposed surface 3A located between source electrode 4and drain electrode 5. Gate electrode 7 is formed of a conductor such asNi/Au, for example.

When FET 9 is in a state that a voltage applied to gate electrode 7 isless than a threshold voltage, namely when FET 9 is in the OFF state,electrons to serve as carriers are not sufficiently present in graphenefilm 3 (channel region) located between source electrode 4 and drainelectrode 5, and the non-conducting state is maintained even when avoltage is applied between source electrode 4 and drain electrode 5. Incontrast, when a voltage of the threshold value or more is applied togate electrode 7 to make FET 9 in the ON state, electrons to serve ascarriers are generated in the channel region. As a result, the channelregion in which electrons to serve as carriers are generated causes astate where source electrode 4 and drain electrode 5 are electricallyconnected to each other. When a voltage is applied between sourceelectrode 4 and drain electrode 5 in such a state, current flows betweensource electrode 4 and drain electrode 5.

As to FET 9 of the present embodiment, source electrode 4 and drainelectrode 5 are formed on exposed surface 3A of stacked body 1 describedabove in connection with the first embodiment. Therefore, a highmobility is stably ensured in graphene film 3 corresponding to a channelregion as an electrically conductive portion. As a result, FET 9 is anelectronic device having the increased switching speed. As acharacteristic of FET 9, R_(c) (contact resistance) of FET 9 ispreferably less than 1 Ωcm, and more preferably less than 0.5 Ωcm.Moreover, R_(s) (sheet resistance) of FET 9 is preferably less than 1000Ωsq, and more preferably less than 500 Ωsq. Further, g_(m) (mutualconductance) of FET 9 is preferably more than 100 mS, and morepreferably more than 1000 mS. fT (cutoff frequency) of FET 9 ispreferably more than 100 GHz, and more preferably more than 1 THz.

Referring next to FIG. 1 and FIGS. 6 to 10, a method for manufacturingFET 9 of the present embodiment will be described. Referring to FIG. 7,in the method for manufacturing FET 9 of the present embodiment, astacked body preparing step is performed first as a step (S110). In thisstep (S110), stacked body 1 of the first embodiment is prepared (seeFIG. 1). Stacked body 1 can be manufactured by the manufacturing methoddescribed above in connection with the first embodiment.

Next, referring to FIG. 7, an ohmic electrode forming step is performedas a step (S120). Referring to FIGS. 1 and 8, in this step (S120),source electrode 4 and drain electrode 5 are formed in contact withexposed surface 3A of stacked body 1. Source electrode 4 and drainelectrode 5 can be formed in the following way, for example. On exposedsurface 3A of graphene film 3, a mask layer made of a resist is formedhaving openings corresponding to respective regions where sourceelectrode 4 and drain electrode 5 are to be formed. Then, anelectrically conductive film made of a conductor (Ni/Au, for example)which is to form source electrode 4 and drain electrode 5 is formed, anda lift-off process is performed to thereby form source electrode 4 anddrain electrode 5.

Referring next to FIG. 7, an insulating film forming step is performedas a step (S130). Referring to FIGS. 8 and 9, in this step (S130), aninsulating film 61 is formed to cover exposed surface 3A of graphenefilm 3 located between source electrode 4 and drain electrode 5 and tocover the main surface of source electrode 4 which is opposite tostacked body 1 and a main surface of drain electrode 5 which is oppositeto stacked body 1. Insulating film 61 can be formed by CVD, for example.As a material forming insulating film 61, silicon nitride for examplemay be used.

Referring next to FIG. 7, a gate electrode forming step is performed asa step (S140). Referring to FIGS. 9 and 10, in this step (S140), gateelectrode 7 is formed to contact the top surface of insulating film 61which covers exposed surface 3A located between source electrode 4 anddrain electrode 5. Gate electrode 7 can be formed in the following way,for example. A mask layer made of a resist is formed having an openingcorresponding to a region where gate electrode 7 is to be formed. Then,an electrically conductive film made of a conductor (Ni/Au for example)which is to form gate electrode 7 is formed, and a lift-off process isperformed to thereby form gate electrode 7.

Next, referring to FIG. 7, a contact hole forming step is performed as astep (S150). Referring to FIGS. 10 and 6, in this step (S150),insulating film 61 located on source electrode 4 and drain electrode 5is removed to form a contact hole for enabling contact between aninterconnection and source electrode 4 and drain electrode 5.Specifically, for example, a mask is formed having openings inrespective regions above source electrode 4 and drain electrode 5, andinsulating film 61 exposed from the openings is etched away. In thisway, contact holes are formed and remaining insulating film 61 formsgate insulating film 6. Gate insulating film 6 not only covers exposedsurface 3A located between source electrode 4 and drain electrode 5 butalso extends to regions which partially cover the upper surface (themain surface opposite to the surface contacting graphene film 3) ofsource electrode 4 and drain electrode 5.

Through these steps, FET 9 of the present embodiment is completed.Interconnections for example are thereafter formed, and each device isseparated by dicing.

INDUSTRIAL APPLICABILITY

The stacked body of the present application is particularlyadvantageously applicable to a stacked body and an electronic deviceincluding a graphene film required to exhibit a high mobility, forexample.

While embodiments of the present invention have been described, itshould be construed that the embodiments disclosed herein are given byway of illustration in all respects, not by way of limitation. It isintended that the scope of the present invention is defined by claims,and encompasses all modifications equivalent in meaning and scope to theclaims.

What is claimed is:
 1. A stacked body comprising: a substrate made ofsilicon carbide and having a first main surface forming an angle of 20°or less with a silicon plane; and a graphene film disposed on the firstmain surface and having an atomic arrangement oriented to an atomicarrangement of the silicon carbide forming the substrate, in an exposedsurface of the graphene film which is a main surface opposite to thesubstrate, an area ratio of a region having a full width at half maximumof G′ of 40 cm⁻¹ or less under Raman spectroscopy analysis being 50% ormore, the G′ being a peak appearing near 2700 cm⁻¹ under Ramanspectroscopy analysis.
 2. The stacked body according to claim 1, whereinthe graphene film covers 80% or more of the first main surface.
 3. Thestacked body according to claim 1, wherein carrier mobility in thegraphene film is 1000 cm²/Vs or more.
 4. The stacked body according toclaim 1, wherein the substrate has a disk shape, and the substrate has adiameter of 50 mm or more.
 5. An electronic device comprising: thestacked body as recited in claim 1; a first electrode disposed on theexposed surface; and a second electrode disposed on the exposed surfaceand spaced from the first electrode.